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AO3703 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
General Description
The AO3703 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. Standard Product AO3703 is Pb-free (meets ROHS & Sony 259 specifications). AO3703L is a Green Product ordering option. AO3703 and AO3703L are electrically identical.
Features
VDS (V) = -20V ID = -2.7 A (VGS = -10V) RDS(ON) < 97m (VGS = -4.5V) RDS(ON) < 130m (VGS = -2.5V) RDS(ON) < 190m (VGS = -1.8V) SCHOTTKY VDS (V) = 20V, I F = 1A, VF<0.5V@0.5A
SOT-23-5 Top View G S A 1 2 3 5 4 D K G
D
K
S
A
Absolute Maximum Ratings T A=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25C ID Continuous Drain Current A TA=70C IDM Pulsed Drain Current B VKA Schottky reverse voltage TA=25C IF Continuous Forward Current A TA=70C IFM Pulsed Forward Current B Power Dissipation Junction and Storage Temperature Range Parameter: Thermal Characteristics MOSFET t 10s Maximum Junction-to-Ambient A Maximum Junction-to-Ambient Maximum Junction-to-Lead C
A
MOSFET -20 8 -2.7 -2.1 -10
Schottky
Units V V A
TA=25C TA=70C
PD TJ, TSTG Symbol RJA RJL
1.14 0.72 -55 to 150 Typ 80.3 117 58.5
20 2 1 10 0.92 0.59 -55 to 150 Max 110 150 80
V A
W C Units C/W
Steady-State Steady-State
Alpha & Omega Semiconductor, Ltd.
AO3703
Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=-250A, VGS=0V VDS=-16V, VGS=0V TJ=55C VDS=0V, VGS=8V VDS=VGS ID=-250A VGS=-4.5V, VDS=-5V VGS=-4.5V, ID=-2.7A TJ=125C -0.3 -10 -0.6 76 111 101 134 7 -0.78 Min -20 -1 -5 100 -1 97 135 130 190 -1 -2 Typ Max Units V nA V A m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC 0.5 0.1 20 34 5.2 0.8 10 V mA pF ns nC
gFS VSD IS
VGS=-2.5V, ID=-2A VGS=-1.8V, ID=-1A Forward Transconductance VDS=-5V, ID=-2.7A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current
Static Drain-Source On-Resistance
4
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge SCHOTTKY PARAMETERS VF Forward Voltage Drop Irm CT trr Qrr Maximum reverse leakage current Junction Capacitance Schottky Reverse Recovery Time Schottky Reverse Recovery Charge
VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz
540 72 49 12 6.1 0.6 1.6 10 12 44 22 21 7.5 0.39
VGS=-4.5V, VDS=-10V, ID=-2.7A
VGS=-4.5V, VDS=-10V, RL=2.8, RGEN=3 IF=-2.7A, dI/dt=100A/s IF=-2.7A, dI/dt=100A/s IF=0.5A VR=16V VR=16V, T J=125C VR=10V IF=1A, dI/dt=100A/s IF=1A, dI/dt=100A/s
A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev0: July 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICA COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISIN OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
AO3703
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15 -4.5V -3.0V -8V 10 -ID (A) -ID(A) -2.0V 4 -2.5V 6 VDS=-5V
5 VGS=-1.5V
2
125C 25C
0 0 1 2 3 4 -VDS (Volts) Fig 1: On-Region Characteristics 5
0 0 1 1.5 -VGS(Volts) Figure 2: Transfer Characteristics 0.5 2
200 VGS=-1.8V RDS(ON) (m) 150 VGS=-2.5V 100
1.8 VGS=-2.5V Normalized On-Resistance 1.6 VGS=-1.8V VGS=-4.5V
1.4
1.2
VGS=-4.5V
1
50 0 2 4 6 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 200
0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1E+01 1E+00
ID=-2.7A RDS(ON) (m) 150 -IS (A)
1E-01 1E-02 1E-03 1E-04 1E-05
125C 25C
125C 100 25C
50 0 2 4 6 8 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
1E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
AO3703
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5 4 -VGS (Volts) 3 2 1 0 0 2 4 6 8 -Qg (nC) Figure 7: Gate-Charge Characteristics VDS=-10V ID=-2.7A Capacitance (pF) 800
600
Ciss
400
200
Crss Coss
0 0 5 10 15 20 -VDS (Volts) Figure 8: Capacitance Characteristics
100.0 TJ(Max)=150C TA=25C -ID (Amps) 10.0 RDS(ON) limited 1.0 1s 10s DC 0.1 0.1 1 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 1ms 0.1s 10ms 100s 10s Power (W)
20 TJ(Max)=150C TA=25C 15
10
5
0 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
ZJA Normalized Transient Thermal Resistance
10
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1 PD Ton T 100 1000
0.1
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA
RJA=110C/W
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.

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